Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 301 - 350 of 2759
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  • We2C-2: Novel Synthesis Method for Wideband Filter with Additional Insertion Phase
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  • We2D-4: A Power-Efficient Plasma Jet Line Enabled by Dielectric Anapole Resonator Technology
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  • We2E-6: Optimizing Material and Shape of 3D-Printed Waveguide Terminations
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  • We2H-1: Efficient InGaP/GaAs HBT Differential Power Amplifier Using a New Adaptive Cross-Capacitor Bias Circuit for 6G FR3 Handset Applications
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  • We2H-5: A 24GHz Power Amplifier with a Switching Output Combiner for a Dual-Mode MIMO Radar System
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  • We3B-5: A 71–76GHz Phased-Array Transmitter with Nested-Coupler-Based Phase Shifter in 65nm CMOS
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  • We3C-4: A 10-17 GHz Continuously Tunable CMOS Filter with FlexibleBandwidth Control Based on Mode-Switching Inductors
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  • We3D-5: Knowledge-based Extrapolation of Neural Network Model for Transistor Modeling
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  • We3G-5: A 134GHz High Efficiency High Power Fundamental Oscillator in 16nm p-FinFET with 12dBm Output Power and 6.5% DC-to-RF Efficiency
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  • IF1-1: Ku-Band Multi-Functional Bandpass Filtering Isolators (BPFIs) Using GaAs Coupled-Line-Based Unilateral Frequency-Selective Stages
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  • IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS
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  • IF1-13: A Wideband TIA-Driver Unit in 22-nm CMOS FDSOI for Integrated Microwave Optoelectronic Oscillators
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  • IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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  • IF1-23: A 28nm CMOS Almost All-Digital 0.5 to 4.0GHz Ultra-Wideband Ground Penetrating Radar for Lunar Surface Exploration
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  • IF1-29: GaN Trap Model Extraction Based on MHz Load-Line Measurements
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  • IF1-35: An Effective Basis Function Generation Structure for Digital Pre-Distortion in Wideband Scenarios
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  • IF1-40: TCN-DPD: Parameter-Efficient Temporal Convolutional Networks for Wideband Digital Predistortion
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  • IF1-47: A Body-Floating G-Band Frequency Doubler for Astronomical Receiver in 90-nm CMOS Process
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-2: A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
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  • Th1C-4: Twisted-Shaped Millimeter-Wave Hybrid Couplers in 150nm GaN Technology for 5G Applications
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  • Th1D-5: A Novel Q-Choked Sapphire Sandwiched Resonator for Wide-Band Measurements of Flat Dielectric Samples
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  • Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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  • Th1G-5: A 0.9pJ/Bit 56Gb/s High-Swing Tri-Mode Wireline Transmitter with 6-Bit DAC Controlled Tailless-CML Driver and Impedance Calibration Loop
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  • Th2A-4: First Demonstration of Highly Scaled RF GaN-on-Si Dielets Embedded in Glass Interposer
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  • Th2B-4: Miniature High-Coupling Lithium Niobate Thin Film Bulk Acoustic Wave Resonators at 10–30GHz
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  • Th2C-5: A Novel Multi-Functional Filtering Amplitude/Phase Circuit with Tunable Frequency Using Simple Phase Control Network
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  • Th2D-4: Cross-Spectrum Phase Noise Measurements of 10-15-Level Stability Photonic Microwave Oscillators
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  • Th2F-5: A Broadband InP Darlington Amplifier with Two-Way Distributed Power Combining
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  • Th2G-5: A 6.5-GHz Low-Power Self-Interference Cancellation Receiver with Two-Stage Feedforward Technique and Automatic Gain Control Loop
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  • Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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  • Th3B-1: Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
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  • Th3B-4: Influence of Double-Deck T-Gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
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  • Th3C-5: An Electrical Balance Duplexer Architecture without Inherent Insertion Loss Limitation
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  • Th3F-1: Algorithmic Design of Nonintuitive On-Chip Multilayered Passive Networks
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  • Th3G-1: A C/X-Band LNA Leveraging a Voltage-Tapered Gain-Cell Stacking Technique for 6G and IR-UWB
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  • WSD-6: Next-Gen End-Point Radios down to sub-µW – Enabling Ubiquitous and Friction-Less Immersion in Existing Wireless Environments
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  • WSG-7: SiGe LNA for SATCOM
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  • WSH-5: Waferscale RF Silicon Interposer Packaging Technology for mm-Wave Phased Arrays and Radars
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  • WSL-7: Sub-THz SiGe HBT Cascode Power Amplifiers with Capacitive Feedback and its Use in a Supply Modulated RF Transmitter Front-End
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  • WSI-7: Opportunities and Challenges on the Next Generation Concurrent Reconfigurable Multi-Radio IoT Devices
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  • WSJ-3: Understanding the Harmonic Balance Simulation Technique for use in the Waveform Engineering of Advanced GaN Power Amplifiers
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  • WSF-7: Mixed-Signal RFIC in SiGe:C BiCMOS for mm-Wave Antenna-in-Package and Antenna-in-Module Solutions
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  • WSB-7: Adaptive mm-Wave MIMO Front-Ends for Energy-Efficient Sensing
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  • WSP-1: Highly Linear Time-Variant Mixers/Filters: Operation and Analysis
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  • AIB1-3: Scientific Machine Learning: Principles, Methods and Applications
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  • WMI-10: Efficient Single Photon Sources Based on Quantum Metasurfaces
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  • WMG-7: Wireless Application in the FR3 Band, a Sweet Spot for GaN-on-Si
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  • WMD-2: mm-Wave Acoustics: Tackling a Fundamental Limitation of Acoustic Wave Technologies
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  • WMK-6: Ga₂O₃ FETs for Future Power and Harsh Environment Electronics
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