Microwave Week 2020 Dashboard

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Technical Session Audience Rating IMS

Displaying 151 - 200 of 2759
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  • Th1D-2: A Microwave Plasma Jet Array Based on SIW-Enabled Evanescent-Mode Cavity Resonator Technology
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  • Th1F-1: A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
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  • Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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  • Th2A-1: Novel Low-Loss Shielded Interconnects for D-band/sub-THz Applications Using Microscale Metal Printing Technologies
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  • Th2A-5: Thin Film Transmission Lines on Low-k Polymer Films for Sub-THz Applications
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  • Th2B-5: A 36GHz Trilayer AlN/ScAlN/AlN Periodically Poled FBAR
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  • Th2D-1: Traceable S-Parameter Measurements up to 165 GHz using 0.8 mm Coaxial Standards
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  • Th2F-2: 300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
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  • Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
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  • Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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  • Th3A-4: An Agile Additively Manufactured 5G/mm-Wave RF Front-End with Multi-Layer Conformality and Printed RF VIAs for Ultra-Wideband and Miniaturized Systems
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  • Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
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  • Th3C-1: Unilateral Single-Pole Multi-Throw Filtering Switch Using Spatiotemporally Modulated Resonator Arrays
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  • Th3D-3: Characterization Approaches to Reduce Process Variation Dependencies for On-Wafer Power Calibration Transfer Devices in Bi/CMOS Technologies
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  • Th3F-3: AI-Assisted Template-Seeded Pixelated Design for Multi-Metal-Layer High-Coupling EM Structures: A Ku-Band 6G FR3 PA in 22nm FDX+
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  • Th3G-2: An 8–12.2GHz CMOS Low-Noise Amplifier with Partially Tail-Coupled Transformer and Large-Transistor Achieving 1.8dB Average NF
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  • WSE-3: ISaC Designs and Applications for Physiological Motion Monitoring
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  • WSM-3: Photonics: The Key to Building Commercial Quantum Computers
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  • WSL-1: InP HBT Technologies for Sub-THz Amplifiers
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  • WSA-3: Spur Analysis and Mitigation Techniques for Fractional Synthesizer
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  • WSO-3: Circuit Design for Large-Scale Trapped Ions
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  • WSJ-6: How to Ensure Flexible and Efficient Use of Spectrum, from Advanced 5G Doherty Power Amplifiers to Digitally Assisted Wideband PA for 6G BTS
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  • WSC-2: Physics-Informed Machine Learning-Based Digital Predistortion of RF Power Amplifiers
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  • WSK-3: THz Semiconductor Electronics
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  • WSQ-2: Applications and Benefits of Design Automation
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  • WMI-3: Efficient High-Fidelity Numerical Modeling Methods for Superconducting Quantum Circuit Devices
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  • WME-5: AI Optimization of High-Power Microwave Filters
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  • WML-2: Fundamentals of Finite Element Method
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  • WMD-7: Engineering of Heat Flow in Nanoscale Devices
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  • WMB-2: Noise Parameter Characterization of Microwave Active Devices vs. Size
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  • WMM-9: Reciprocal Full-Duplex FMCW Radar Systems with Self-Interference Cancellation for High Accuracy Distributed Radar Networks
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  • WMA-2: Chipletization, RF Design and Thermal Modeling of mm-Wave InP Power Amplifiers and Modules
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  • WMH-5: Advancing Antennas and Microwave Devices Through Laser Powder-Bed Fusion Additive Manufacturing
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  • WMC-4: THz Heterodyne Receivers for the Study of Planet Atmospheres and Astrophysics Applications
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  • WPTB1-1: Near-field Wireless Power Technologies: Basics and Design Principles
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  • WMR-5: Digital Control and Linearization of High-Efficiency LMBAs
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  • Tu1A-1: A Fully Integrated Ka-Band FMCW Radar SoC with Baseband Accelerator for Vital Signs Monitoring in 40-nm CMOS
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  • Tu1A-4: A 94GHz 8Tx-16Rx Direct Center-Fed Active Array TD-MIMO FMCW Radar in 28-nm CMOS
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  • Tu1B-4: Hardware-Software Platform Enabling Joint Communication and Radar Sensing at 25GHz with 1GHz Bandwidth
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  • Tu1C-5: Programmable Microwave Photonic Processor in the Thin-Film Lithium Niobate Platform
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  • Tu1E-2: Modeling Josephson Traveling-Wave Parametric Amplifiers with Electromagnetic and Circuit Co-Simulation
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  • Tu1F-1: Transforming 5G Wireless Power Harvesting: A Broadbeam Equiconvex Lens-Integrated mmWave Harvester for Smart City Environments
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  • Tu2A-3: Clutter-Based Wireless Localization in Distributed Radar Networks with Repeaters
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  • Tu2B-5: Intelligent Smoke Detection: State Recognition and Monitoring of Heating Processes Using FMCW Radar and Data-Driven Algorithms
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  • Tu2C-5: 100-Gbps Fiber-Terahertz System in 330-GHz Band Using Stable Transmitter and Simple Photonics-Enabled Receiver
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  • Tu2D-4: 10 Watt CW Power Handling SPDT RF Switch Using E-Mode p-GaN Dual-Gate HEMT Technology
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  • Tu2E-5: Calibration of Wideband Multiport Junction Receivers Using Memory-Polynomial-Informed Neural Network
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  • Tu2F-4: 27-GHz Silicon-Integrated Rectenna Based on Novel Multilayer Substrate
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  • Tu3A-5: Resonance Frequency Retuning System for Flexible MRI Coils
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  • Tu3B-2: A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
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