Microwave Week 2020 Dashboard

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Displaying 151 - 200 of 2742

We1C-3: A New Folded Coupling Reflectionless Bandpass Filter with Broadband Ultra-Low Reflection Property and Very High Frequency Selectivity
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We1E-1: Compact Ku-Band Diplexer with Additive Manufactured Multi-Material Dielectric Resonator Insets
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We1G-2: A 22–34GHz CMOS Neutralization-Based Direct-Conversion I/Q Up-Converter for 1024-QAM Modulation
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We1H-3: A Continuous-Mode Class-F-1 X-Band GaN MMIC Power Amplifier with a 29.7% Fractional Bandwidth
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We2B-2: A 28/39-GHz Reconfigurable Phased-Array Transmitter Front-End for 5G New Radio in a 65nm CMOS
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We2C-2: Novel Synthesis Method for Wideband Filter with Additional Insertion Phase
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We2D-4: A Power-Efficient Plasma Jet Line Enabled by Dielectric Anapole Resonator Technology
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We2E-6: Optimizing Material and Shape of 3D-Printed Waveguide Terminations
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We2H-1: Efficient InGaP/GaAs HBT Differential Power Amplifier Using a New Adaptive Cross-Capacitor Bias Circuit for 6G FR3 Handset Applications
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We2H-5: A 24GHz Power Amplifier with a Switching Output Combiner for a Dual-Mode MIMO Radar System
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We3B-5: A 71–76GHz Phased-Array Transmitter with Nested-Coupler-Based Phase Shifter in 65nm CMOS
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We3C-4: A 10-17 GHz Continuously Tunable CMOS Filter with FlexibleBandwidth Control Based on Mode-Switching Inductors
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We3D-5: Knowledge-based Extrapolation of Neural Network Model for Transistor Modeling
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We3G-5: A 134GHz High Efficiency High Power Fundamental Oscillator in 16nm p-FinFET with 12dBm Output Power and 6.5% DC-to-RF Efficiency
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IF1-1: Ku-Band Multi-Functional Bandpass Filtering Isolators (BPFIs) Using GaAs Coupled-Line-Based Unilateral Frequency-Selective Stages
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IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS
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IF1-13: A Wideband TIA-Driver Unit in 22-nm CMOS FDSOI for Integrated Microwave Optoelectronic Oscillators
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IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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IF1-23: A 28nm CMOS Almost All-Digital 0.5 to 4.0GHz Ultra-Wideband Ground Penetrating Radar for Lunar Surface Exploration
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IF1-29: GaN Trap Model Extraction Based on MHz Load-Line Measurements
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IF1-36: Multi-Functional Modulated Surface Based on M-Type Ferrite for mmWave Application
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IF1-43: A Compact Brick-Type 40GHz-Band DBF Transmit Antenna Module Using Direct Digital RF Technology
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Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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Th1A-4: A Wideband W-Band Slotted Over-Mode Cavity Array with Dumbbell-Shaped Holey-EBG Units Based on Metallic Silicon-Based Process
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Th1B-5: A Microwave Acoustic QPSK Modulator Leveraging Poled Ferroelectrics
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Th1D-2: A Microwave Plasma Jet Array Based on SIW-Enabled Evanescent-Mode Cavity Resonator Technology
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Th1F-1: A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
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Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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Th2A-1: Novel Low-Loss Shielded Interconnects for D-band/sub-THz Applications Using Microscale Metal Printing Technologies
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Th2B-1: KEYNOTE: The Unexpected Technology Race Between Surface (SAW) and Bulk (BAW) Acoustic Wave Filters in Today’s Cell Phones
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Th2B-5: A 36GHz Trilayer AlN/ScAlN/AlN Periodically Poled FBAR
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Th2D-2: Millimeter-Wave Wideband Active Load-Pull System Using Vector Network Analyzer Frequency Extenders
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Th2F-2: 300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
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Th2G-2: A 130GHz 360° Gain-Invariant Phase Shifter with 5.625° Phase Resolution, 0.19° RMS Phase Error and < 0.56dB RMS Gain Error
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Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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Th3A-4: An Agile Additively Manufactured 5G/mm-Wave RF Front-End with Multi-Layer Conformality and Printed RF VIAs for Ultra-Wideband and Miniaturized Systems
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Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
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Th3C-2: Tunable Dual-Band Coaxial Filter with Independent Band Control Using a Single Tuning Element Per Band
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Th3D-3: Characterization Approaches to Reduce Process Variation Dependencies for On-Wafer Power Calibration Transfer Devices in Bi/CMOS Technologies
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Th3F-3: AI-Assisted Template-Seeded Pixelated Design for Multi-Metal-Layer High-Coupling EM Structures: A Ku-Band 6G FR3 PA in 22nm FDX+
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Th3G-2: An 8–12.2GHz CMOS Low-Noise Amplifier with Partially Tail-Coupled Transformer and Large-Transistor Achieving 1.8dB Average NF
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WSD-7: Body Area Network – Connecting and Powering Things Together Around the Human Body
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WSG-8: Low-Cost Silicon Beamformers in Ku and Ka Band Powering SATCOM User-Terminals
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WSH-6: Development of Co-Packaged Optics Technology for Photonics Applications
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WSL-8: Stacked-FET CMOS Power Amplifier for mm-Wave and Sub-THz Applications
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WSI-8: Integrated Self-Interference Cancelers for Fully-Duplex Radios
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WSN-4: Interconnect Challenges for Scalable Quantum Computing
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WSF-4: Vision on Phased Arrays Using Meta-Surfaces and on the Implementation of LO Phase Shifting Based on ILOs
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WSB-3: Toward Integrated mm-Wave Communication and Sensing with Compressive Beam Shaping Techniques
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QUB1-1: Introduction to Quantum Computing: Qubits, Gates, and Algorithms
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Microwave Week 2020 Dashboard

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