Microwave Week 2020 Dashboard

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Technical Session Audience Rating IMS

Displaying 51 - 100 of 2742
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  • We2H-4: A Compact Doubly Neutralized Ku Band Power Amplifier with 39% Peak PAE and 23 dBm Output Power in 22FDX+ EDMOS for 6G FR3
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  • We3B-4: A D-Band Front-End T/R MMIC in a 70-nm GaN HEMT Technology
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  • We3C-2: Miniaturized D-Band SPDT/DPDT Switches Using Series Triple Coupled Transformer Cores in 65-nm CMOS SOI
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  • We3D-3: Frequency-Query Enhanced Electromagnetic Surrogate Modeling with Edge Anti-Aliasing Pixelation for Bandpass Filter Inverse Design
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  • We3G-3: A 60GHz Super Harmonic Injection Locked Oscillator with Quadrature Outputs
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  • We3H-5: A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%
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  • IF1-5: Metasurface Design for RCS Reduction Applications
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  • IF1-12: Detection Algorithm for Waveguide Connection and Probe Contact States Based on Machine Learning in Frequency up to 1.1THz
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  • IF1-18: A High-Efficiency Outphasing Power Amplifier Utilizing a Synthesized Direct-Matching Technique Based on Two-Section Branch-Line Coupler Output Combiner
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  • IF1-22: Ultra-Wideband 6-Bit Passive Phase Shifter with Open-Circuit Microstrip Pseudo-π Network and Low RMS Phase Error
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  • IF1-28: High Power-Added-Efficiency AlGaN/GaN E-Mode HEMTs for Low-Supply-Voltage RF Terminal Applications
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  • IF1-33: High-Efficiency Low-Complexity ASK Transmitter Using an Inverse Class-F Power Amplifier with a Nonuniform Transmission-Line-Based Load Transformation Network
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  • IF1-38: Fast-Switchable 3.6GHz GaN Doherty Power Amplifier for Energy-Efficient Non-Continuous Transmission of 256-QAM Signals
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  • IF1-44: A 30-mW D-Band High-Sensitivity Self-Injection-Locked Radar Sensor with Integrated SIW Antenna in 70-nm GaAs pHEMT Technology
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-2: A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
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  • Th1C-3: Ka-Band AFSIW Circuit-on-Substrate for Satellite Applications
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  • Th1D-4: Dielectric Measurements of Conventional and 3-D Printed Substrate Materials from 50GHz to 1.5THz Using Free-Space and TDS Methods
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  • Th1F-4: A 16-Way 115–129GHz High Power Amplifier with 20.9dBm PSAT and 17.6dBm P1dB in 40nm Bulk CMOS
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  • Th1G-4: A >22GS/s, 44dB SNDR Wideband 4×4 Time-Interleaved Sampling Front-End with Bulk-Driven Mismatch Calibration in 22nm FDSOI
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  • Th2A-3: High Performance Waveguide Launcher in Interposer Package Technology for 77/79GHz Automotive 4D Imaging Radar
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  • Th2B-3: Frequency and Bandwidth Design of Millimeter Wave Thin-Film Lithium Niobate Acoustic Filters
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  • Th2C-3: Novel Reflective-Type Bandpass Filter with Simultaneously Integrated Tunable Attenuation and Phase Shifting Functions
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  • Th2D-3: A Wideband Digital Compensation Model Based on Fast Bandwidth Sensing for Zero-IF Receiver
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  • Th2F-4: 208GHz InP Distributed Amplifier with Combining Loss Reduction Techniques
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  • Th2G-4: A 71–86-GHz Receiver with 5-GHz IF Signal Bandwidth for E-Band Broadband Communication in 65-nm CMOS
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  • Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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  • Th3B-1: Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
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  • Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
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  • Th3C-4: Spin Wave Fast Tunable (SWiFT) Filter
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  • Th3D-5: Cryogenic Microwave Probe Technology with High Thermal Insulation
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  • Th3F-4: Dall-EM: Generative AI with Diffusion Models for New Design Space Discovery and Target-to-Electromagnetic Structure Synthesis
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  • Th3G-3: Broadband LNA with Dual-Resonance Matching Network with Capacitive Feedback for Improved Gain and Noise Figure Using 0.1-µm GaAs pHEMT Technology
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  • WSG-1: Ku- and Ka-Band Beamformer with Antenna Arrays
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  • WSM-5: Future of optical and wireline transceiver
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  • WSL-5: Design Methodology for Sub-THz Power Amplifier and its Application to 6G D-Band in Advanced CMOS and BiCMOS Technologies
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  • WSI-4: Self-Interference Cancellation Techniques in Frequency Division Duplexing Receiver Front-Ends
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  • WSO-11: Progress in Cryogenic Circuits for Superconducting Qubit-Based Quantum Computing
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  • WSJ-7: A Fully Integrated Power Amplifier Module with Bias Controller to Tackle 5G mMIMO Basestation Applications at 3.5GHz
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  • WSC-5: AI-Based Algorithms in Analog Circuit Topology Generation and Beyond
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  • WSK-6: Characterization and Modeling of HEMTs Beyond 110GHz
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  • WSQ-5: Accelerating High-Frequency Circuit Design Using Advanced AI Algorithms
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  • WMI-6: Trapped-Ion Quantum Computing at Quantinuum
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  • WMG-1: GaN-on-SiC vs. GaN-on-Si: Emerging Opportunities and Market Dynamics in the RF GaN Industry
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  • WML-5: Towards a Unified Theory that Reveals the Essence of Numerical Methods in Electromagnetics
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  • WMK-3: The Role and Challenges of Ultra-Wide Bandgap Semiconductors in Next-Generation GaN HEMTs
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  • WMM-2: Digital Self-Interference Cancellation for Different Modulation Formats
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  • WMF-1: On-Wafer Calibrations and Material Measurements
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  • WMJ-1: Lossy Microwave Sensors
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  • WMN-2: The Role of Advanced Microelectronics and Heterogeneous Integration for Next-Generation 5G/6G Microsystems
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