Microwave Week 2020 Dashboard

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Tu2D-2: An Integrated Doherty Power Amplifier Module Based on an Advanced GaN-on-Si HEMT Technology and a Wideband Power Combiner
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Tu2E-2: DeltaDPD: Exploiting Dynamic Temporal Sparsity in Recurrent Neural Networks for Energy-Efficient Wideband Digital Predistortion
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Tu2F-2: High-Power Quasi-Vertical GaN Schottky Barrier Diode RF Rectifier Based on Impedance Compression Network for WPT Applications
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Tu3A-2: Advanced Immunoassay Detection Using Microwave Whispering Gallery Mode Resonators
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Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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Tu3B-2: A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
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Tu3D-1: A 4–240-GHz InP Variable-Gain Amplifier Using an Analog-Controlled Input Attenuation Network
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Tu3E-3: Simple Analog Pre-Distorter Design with Controllable AM/AM and AM/PM Distortion
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Tu3F-5: AoA Sensing Enabled Reconfigurable Intelligent Surface
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Tu4A-5: Moving Person Vital Sign Detection Using Four-Channel Phase- and Quadrature Self-Injection-Locked Radar and MPCA Method for Dynamic Clutter Immunity
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Tu4B-6: Low Power Consumption and Beam-Sustainable Reconfigurable Intelligent Surface for Fixed Wireless Communication at Millimeter-Wave 5G Band
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Tu4C-6: Highly-Efficient and Low-Power Class-E Amplifier for Miniaturization Using a Small Antenna
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Tu4E-3: Reference Phase Adjustment Technique with Cross-Polarization Cancellation for Enhanced Digital Predistortion in Mobile Dual-Polarized Arrays
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Tu4F-4: Polarimetric Spectrometer Receivers for Remote Sensing of Ionospheric Currents
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We1B-5: A C-Band High-Precision Amplitude-Phase Control Multi-Functional Chip with Symmetric Polyphase Filter and X-Type Attenuator
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We1C-4: Miniaturized Multilayer and Self-Packaged Triple-Mode Bandpass Filter with High Selectivity and Wide Stopband
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We1E-3: Advances on Size Reduction and Spurious Suppression in Rectangular Waveguide Filters
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We1G-4: Monolithic Implementation and Performance Comparison of Three Single Balanced Architectures for D-Band HEMT Mixers
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We1H-4: An X-Band 35-dBm Compact Continuous-Mode Class-J Power Amplifier in 0.25-µm GaN Process
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We2B-3: A 28GHz Compact Phased-Array Beamformer with 21.3dBm PSAT and 5.2dB Noise Figure in 40nm CMOS
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We2C-3: Compact 7–23-GHz Bandpass Filter with High Selectivity and Wide Stopband Using Hybrid Microstrip/SIDGS Scheme for 6G Application
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We2D-6: THz Diffraction Radiation Analysis of Finite Graphene Strip Grating with Grounded Dielectric Substrate Excited by Electron Beam
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We2G-2: A 110–130-GHz Frequency Quadrupler with 12.5% Drain Efficiency in 22-nm FD-SOI CMOS
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We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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We3B-2: A 60-GHz RadCom Down-Converter in 22-nm CMOS FDSOI for Short-Range Hand Gesture Sensing and High-Data-Rate Proximity Communication
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We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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We3C-4: A 10-17 GHz Continuously Tunable CMOS Filter with FlexibleBandwidth Control Based on Mode-Switching Inductors
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We3D-6: Analysis of a Self-Injected Super-Regenerative Oscillator for Motion Sensing
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We3H-1: KEYNOTE: Future State of GaN MMIC Technology for Defense Electronics
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IF1-2: GaN-Based Power Amplification Unit for the Europa Clipper Mission
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IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS
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IF1-15: A 230-GHz 3.5-dBm Phase-Shifter-Embedded Frequency Tripler with 360° Phase-Shifting Range in 40-nm CMOS
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IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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IF1-25: 2200W High-Efficiency Amplifier Module Covering 325MHz and 352MHz Applications
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IF1-31: Analysis of High-Efficiency Power Amplifiers Exploiting Input Harmonics and Nonlinear I-V Knee Characteristics
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IF1-35: An Effective Basis Function Generation Structure for Digital Pre-Distortion in Wideband Scenarios
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IF1-42: Heart Rate Variability Monitoring Using a Chord-Based Algorithms in Low-IF CW Radar Systems
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Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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Th1B-4: Wideband Sub-THz Evanescent-Mode Waveguide Switch Using Reconfigurable Photogenerated Solid-State Plasma Elements
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Th1D-1: An EVA-Based High-Power and Absorptive Frequency-Selective Plasma Limiter
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Th1F-1: A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
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Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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Th1G-6: A Bi-Directional 5-Bit 131.5–150.5GHz Digital-Programmable Phase Shifter with 2.1°/0.3dB RMS Phase/Gain Errors in 40nm CMOS
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Th2A-5: Thin Film Transmission Lines on Low-k Polymer Films for Sub-THz Applications
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Th2B-5: A 36GHz Trilayer AlN/ScAlN/AlN Periodically Poled FBAR
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Th2D-1: Traceable S-Parameter Measurements up to 165 GHz using 0.8 mm Coaxial Standards
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Th2F-1: KEYNOTE: InP HBT Technologies for Integrated Circuit Development of Efficient mm-Wave and THz Power Amplifiers and Sources
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Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
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Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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Microwave Week 2020 Dashboard

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