Microwave Week 2020 Dashboard

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Technical Session Audience Rating IMS

Displaying 101 - 150 of 2742
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  • Th2A-4: First Demonstration of Highly Scaled RF GaN-on-Si Dielets Embedded in Glass Interposer
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  • Th2B-4: Miniature High-Coupling Lithium Niobate Thin Film Bulk Acoustic Wave Resonators at 10–30GHz
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  • Th2C-5: A Novel Multi-Functional Filtering Amplitude/Phase Circuit with Tunable Frequency Using Simple Phase Control Network
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  • Th2D-4: Cross-Spectrum Phase Noise Measurements of 10-15-Level Stability Photonic Microwave Oscillators
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  • Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
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  • Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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  • Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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  • Th3B-2: On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
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  • Th3B-4: Influence of Double-Deck T-Gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
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  • Th3D-2: Integrated Solution for Linear and Non-Linear Single-Touchdown On-Wafer Characterization of D-Band Mixers
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  • Th3F-2: A D-Band InP Power Amplifier Featuring Fully AI-Generated Passive Networks
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  • Th3G-2: An 8–12.2GHz CMOS Low-Noise Amplifier with Partially Tail-Coupled Transformer and Large-Transistor Achieving 1.8dB Average NF
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  • WSD-3: Design Methodologies for Low-Power Frequency Synthesizers
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  • WSG-4: Building Large-Volume SATCOM Phased Arrays Using Silicon
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  • WSH-2: 3D Heterogenous Integration (3DHI) for Advanced Communications
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  • WSL-5: Design Methodology for Sub-THz Power Amplifier and its Application to 6G D-Band in Advanced CMOS and BiCMOS Technologies
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  • WSI-4: Self-Interference Cancellation Techniques in Frequency Division Duplexing Receiver Front-Ends
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  • WSO-11: Progress in Cryogenic Circuits for Superconducting Qubit-Based Quantum Computing
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  • WSJ-7: A Fully Integrated Power Amplifier Module with Bias Controller to Tackle 5G mMIMO Basestation Applications at 3.5GHz
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  • WSC-5: AI-Based Algorithms in Analog Circuit Topology Generation and Beyond
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  • WSK-6: Characterization and Modeling of HEMTs Beyond 110GHz
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  • WSQ-5: Accelerating High-Frequency Circuit Design Using Advanced AI Algorithms
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  • WMI-6: Trapped-Ion Quantum Computing at Quantinuum
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  • WMG-1: GaN-on-SiC vs. GaN-on-Si: Emerging Opportunities and Market Dynamics in the RF GaN Industry
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  • WML-5: Towards a Unified Theory that Reveals the Essence of Numerical Methods in Electromagnetics
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  • WMK-3: The Role and Challenges of Ultra-Wide Bandgap Semiconductors in Next-Generation GaN HEMTs
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  • WMM-2: Digital Self-Interference Cancellation for Different Modulation Formats
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  • WMF-1: On-Wafer Calibrations and Material Measurements
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  • WMJ-1: Lossy Microwave Sensors
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  • WMN-2: The Role of Advanced Microelectronics and Heterogeneous Integration for Next-Generation 5G/6G Microsystems
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  • WMO-1: Workshop Overview
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  • RFB1-1: The RF/Microwave Signal Chain, Network Characteristics, Analysis and Measurement
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  • WMP-3: Design Challenges and Considerations for Reliable Rigid-Flex PCB up to 100GHz
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  • Tu1A-1: A Fully Integrated Ka-Band FMCW Radar SoC with Baseband Accelerator for Vital Signs Monitoring in 40-nm CMOS
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  • Tu1A-5: Radar-Based Measurement of Image Rejection Ratio in Sub-THz Hartley Receivers with its Impact on Doppler Detection Accuracy
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  • Tu1C-1: Field Trial of a Coastal Surveillance System Exploiting a Multistatic Multiband Photonics-Based Radar in Coherent Sparse MIMO Configuration
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  • Tu1D-2: A 7GHz High Efficiency GaN Doherty Power Amplifier Module for 5G Massive MIMO Base-Stations
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  • Tu1E-4: A Photonic Link at 4.7K with >1GHz Bandwidth Towards an Optical Quantum Computing Interface
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  • Tu1F-4: Power Receiving Circuit Design of Single-Ended Biological Capacitive WPT for Artificial Retina System
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  • Tu2A-5: Three-Dimensional Fourier Domain Millimeter-Wave Imaging Using Incoherent Active Illumination and Pulse Compression
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  • Tu2C-2: On-Chip Photonic THz Emitter with Integrated InGaAs UTC-PD and 2×2 MPA Array on SiC Substrate
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  • Tu2D-1: RF-Input Doherty-Like Load-Modulated Balanced Amplifier with Decade Bandwidth Enabled by Novel Broadband 180-Degree Power Divider
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  • Tu2E-2: DeltaDPD: Exploiting Dynamic Temporal Sparsity in Recurrent Neural Networks for Energy-Efficient Wideband Digital Predistortion
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  • Tu2E-6: AdaAFE-CIM: A Hardware Implementation of Subspace Tracking for Adaptive Radar Data Compression
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  • Tu2F-5: Compact Design of Highly-Efficient Dual-Band Voltage Doubler Rectifier by Using Second-Harmonics Suppression for Wireless Power Transfer
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-2: A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
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  • Tu3C-5: Recollections of Al Katz
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  • Tu3E-2: An Integrable Analog Domain Linearization Architecture for the Power Amplifiers in MIMO Systems
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  • Tu3F-5: AoA Sensing Enabled Reconfigurable Intelligent Surface
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