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Technical Session Audience Rating IMS

Displaying 101 - 150 of 2759
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  • Tu1D-4: A 400W Symmetric Doherty Power Amplifier Covering 1.8–2.7GHz
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  • Tu1E-5: A Demonstration of Multi-Floating Superconducting Qubits on a 3D Flip-Chip Platform with TLS Loss Mitigation via Apertures
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  • Tu1F-5: Overcoming Efficiency Degradation in Wireless Power Transfer Systems: A Supply Voltage Modulation Method Empowered by 5.64-GHz 256-Element Antenna Array Receiving 10.6-Watt
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  • Tu2B-3: Body-Resonance Human Body Powering
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  • Tu2C-4: High Sensitivity W-Band LEKID-Based On-Chip Polarimeter
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  • Tu2D-3: System-in-Package Doherty Power Amplifier Using Hybrid LDMOS/GaN Line-Up for 5G Macro Driver Applications
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  • Tu2E-3: Enhancing Digital Predistortion Performance Under Load Mismatch Using a VSWR Generative Neural Network Simulator
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  • Tu2F-2: High-Power Quasi-Vertical GaN Schottky Barrier Diode RF Rectifier Based on Impedance Compression Network for WPT Applications
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  • Tu3A-3: Numerical Testbench for a priori Uncertainty Estimation of Dielectric Spectroscopy in Organ-on-Chip Devices
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-3: Ka-Band 4×4 Butler Matrix-Based Switched Beamformer Supporting Uniform EIRP Beams in Single-/Dual-Port Excitations
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  • Tu3D-2: A 4-420-GHz Distributed Amplifier MMIC in a 20-nm InGaAs-on-Si HEMT Technology With 11±2-dB Gain
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  • Tu3E-4: A GaAs HBT Doherty Power Amplifier with 31dBm Linear Output Power and 43% Efficiency by Using Dynamic IM3 Cancellation
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  • Tu3F-6: A Hybrid CMOS-Polyimide Adaptive Force Radiometric Array with 3-5 GHz Wireless Connectivity
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  • Tu4B-1: Shape estimation and pattern correction of flexible phased arrays using local curvature measurements
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  • Tu4C-2: Planar Low-Loss Ultra-Wideband Coaxial-Less Balun and 4-Way Combiner for High-Power Applications
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  • Tu4D-1: Ultrawideband Vector Modulators for Next-Gen Wireless Networks in the 200–480GHz Range
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  • Tu4E-4: Phase Derivative Approach for Nonlinear Power Amplifier Forward Modeling with 2-D LUTs
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  • Tu4F-4: Polarimetric Spectrometer Receivers for Remote Sensing of Ionospheric Currents
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  • We1B-5: A C-Band High-Precision Amplitude-Phase Control Multi-Functional Chip with Symmetric Polyphase Filter and X-Type Attenuator
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  • We1D-1: KEYNOTE: AI on Functions and Neural Operators
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  • We1E-4: Coupling Matrix Reconfiguration Aided with a Start System Based on Simultaneous Diagonalization
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  • We1G-4: Monolithic Implementation and Performance Comparison of Three Single Balanced Architectures for D-Band HEMT Mixers
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  • We1H-5: An X-Band Low-Voltage GaN HEMT Stacked Power Amplifier Operating in Class-J with Active Second Harmonic Injection
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  • We2B-3: A 28GHz Compact Phased-Array Beamformer with 21.3dBm PSAT and 5.2dB Noise Figure in 40nm CMOS
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  • We2C-4: Extraction of Coupling Matrix for Bandpass Filters Based on Magnitude of S-Parameters
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  • We2D-6: THz Diffraction Radiation Analysis of Finite Graphene Strip Grating with Grounded Dielectric Substrate Excited by Electron Beam
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  • We2G-2: A 110–130-GHz Frequency Quadrupler with 12.5% Drain Efficiency in 22-nm FD-SOI CMOS
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  • We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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  • We3B-2: A 60-GHz RadCom Down-Converter in 22-nm CMOS FDSOI for Short-Range Hand Gesture Sensing and High-Data-Rate Proximity Communication
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  • We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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  • We3C-5: An Ultra-Compact D-Band SIW Filter with Multifunction Transitions to Coplanar Input/Output
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  • We3G-1: A 7.8–11.9GHz Quad-Mode Class-F2,3 VCO with Multi-Stage Cross-Shared Common-Mode Path Achieving -131.9dBc/Hz 1-MHz Phase Noise and 201.8dBc/Hz FoMT
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  • We3H-2: A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications
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  • IF1-3: Dielectric Filled Waveguide Antenna for Air-Borne Application
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  • IF1-8: A 28GHz Dual-Mode Power Amplifier for Enhanced Load Resiliency or Back-Off Efficiency Enhancement in 22nm FDSOI Process
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  • IF1-16: RPRS: Real-Time Privacy mm-Wave Radar Sensing System
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  • IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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  • IF1-26: An Ultra-Low-Cost Early Warning Sensor for Pedestrians
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  • IF1-31: Analysis of High-Efficiency Power Amplifiers Exploiting Input Harmonics and Nonlinear I-V Knee Characteristics
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  • IF1-36: Multi-Functional Modulated Surface Based on M-Type Ferrite for mmWave Application
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  • IF1-43: A Compact Brick-Type 40GHz-Band DBF Transmit Antenna Module Using Direct Digital RF Technology
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  • Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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  • Th1A-4: A Wideband W-Band Slotted Over-Mode Cavity Array with Dumbbell-Shaped Holey-EBG Units Based on Metallic Silicon-Based Process
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  • Th1B-5: A Microwave Acoustic QPSK Modulator Leveraging Poled Ferroelectrics
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  • Th1D-2: A Microwave Plasma Jet Array Based on SIW-Enabled Evanescent-Mode Cavity Resonator Technology
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  • Th1F-1: A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
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  • Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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  • Th2A-1: Novel Low-Loss Shielded Interconnects for D-band/sub-THz Applications Using Microscale Metal Printing Technologies
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  • Th2A-5: Thin Film Transmission Lines on Low-k Polymer Films for Sub-THz Applications
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