Microwave Week 2020 Dashboard

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Technical Session Audience Rating IMS

Displaying 2051 - 2100 of 2759
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  • WMK-6: Ga₂O₃ FETs for Future Power and Harsh Environment Electronics
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  • WMM-6: Adaptive RF Front-Ends as a Key Enabler of Modern Communication Systems
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  • WMF-5: Broadband Differential On-Wafer Measurements: Challenges in De-Embedding, Drive Control and Related Aspects
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  • WMJ-5: 3D-Printed RF Devices and Antennas for Sensing
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  • WMN-6: Die-Embedded Glass Packaging Technology
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  • WMO-5: Microwave Biomedical Radar for Clinical Applications
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  • RFB1-5: End to End RF Simulation
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  • WMQ-1: Advanced Measurement Techniques and Comprehensive Analysis of Trapping and Thermal Effects in GaN-Based HEMTs
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  • Tu1A-2: A D-Band 1Tx 4Rx Mid-Range Automotive CMOS FMCW Radar
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  • Tu1B-2: A V-Band OOK Transmitter with 14.5Gbps Data Rate and 11.1% DC-to-RF Efficiency in 65nm CMOS
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  • Tu1C-2: Ultra-Low Phase Noise Frequency Synthesis Using Electro-Optic Detector-Based Comb-Microwave Synchronization
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  • Tu1D-3: A 90W High-Efficiency Four-Way Doherty Power Amplifier with 37.8% Fractional Bandwidth Over a 15dB Power Back-Off Range
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  • Tu1E-5: A Demonstration of Multi-Floating Superconducting Qubits on a 3D Flip-Chip Platform with TLS Loss Mitigation via Apertures
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  • Tu1F-5: Overcoming Efficiency Degradation in Wireless Power Transfer Systems: A Supply Voltage Modulation Method Empowered by 5.64-GHz 256-Element Antenna Array Receiving 10.6-Watt
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  • Tu2B-2: 60 Mbps Time-Domain Video Transfer Using Body Communication
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  • Tu2C-4: High Sensitivity W-Band LEKID-Based On-Chip Polarimeter
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  • Tu2D-3: System-in-Package Doherty Power Amplifier Using Hybrid LDMOS/GaN Line-Up for 5G Macro Driver Applications
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  • Tu2E-3: Enhancing Digital Predistortion Performance Under Load Mismatch Using a VSWR Generative Neural Network Simulator
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  • Tu2F-2: High-Power Quasi-Vertical GaN Schottky Barrier Diode RF Rectifier Based on Impedance Compression Network for WPT Applications
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  • Tu3A-2: Advanced Immunoassay Detection Using Microwave Whispering Gallery Mode Resonators
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-3: Ka-Band 4×4 Butler Matrix-Based Switched Beamformer Supporting Uniform EIRP Beams in Single-/Dual-Port Excitations
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  • Tu3D-1: A 4–240-GHz InP Variable-Gain Amplifier Using an Analog-Controlled Input Attenuation Network
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  • Tu3E-4: A GaAs HBT Doherty Power Amplifier with 31dBm Linear Output Power and 43% Efficiency by Using Dynamic IM3 Cancellation
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  • Tu3F-6: A Hybrid CMOS-Polyimide Adaptive Force Radiometric Array with 3-5 GHz Wireless Connectivity
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  • Tu4A-5: Moving Person Vital Sign Detection Using Four-Channel Phase- and Quadrature Self-Injection-Locked Radar and MPCA Method for Dynamic Clutter Immunity
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  • Tu4C-1: KEYNOTE: Advancements in RF High Power Supply Chain and Ecosystem Enabling Transition from Vacuum Electron Devices to Multi-kW RF Solid-State Solutions and Systems
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  • Tu4D-1: Ultrawideband Vector Modulators for Next-Gen Wireless Networks in the 200–480GHz Range
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  • Tu4E-3: Reference Phase Adjustment Technique with Cross-Polarization Cancellation for Enhanced Digital Predistortion in Mobile Dual-Polarized Arrays
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  • Tu4F-4: Polarimetric Spectrometer Receivers for Remote Sensing of Ionospheric Currents
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  • We1B-5: A C-Band High-Precision Amplitude-Phase Control Multi-Functional Chip with Symmetric Polyphase Filter and X-Type Attenuator
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  • We1D-1: KEYNOTE: AI on Functions and Neural Operators
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  • We1E-3: Advances on Size Reduction and Spurious Suppression in Rectangular Waveguide Filters
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  • We1G-4: Monolithic Implementation and Performance Comparison of Three Single Balanced Architectures for D-Band HEMT Mixers
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  • We1H-4: An X-Band 35-dBm Compact Continuous-Mode Class-J Power Amplifier in 0.25-µm GaN Process
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  • We2B-3: A 28GHz Compact Phased-Array Beamformer with 21.3dBm PSAT and 5.2dB Noise Figure in 40nm CMOS
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  • We2C-3: Compact 7–23-GHz Bandpass Filter with High Selectivity and Wide Stopband Using Hybrid Microstrip/SIDGS Scheme for 6G Application
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  • We2D-6: THz Diffraction Radiation Analysis of Finite Graphene Strip Grating with Grounded Dielectric Substrate Excited by Electron Beam
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  • We2G-2: A 110–130-GHz Frequency Quadrupler with 12.5% Drain Efficiency in 22-nm FD-SOI CMOS
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  • We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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  • We3B-2: A 60-GHz RadCom Down-Converter in 22-nm CMOS FDSOI for Short-Range Hand Gesture Sensing and High-Data-Rate Proximity Communication
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  • We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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  • We3C-4: A 10-17 GHz Continuously Tunable CMOS Filter with FlexibleBandwidth Control Based on Mode-Switching Inductors
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  • We3D-6: Analysis of a Self-Injected Super-Regenerative Oscillator for Motion Sensing
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  • We3H-1: KEYNOTE: Future State of GaN MMIC Technology for Defense Electronics
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  • IF1-2: GaN-Based Power Amplification Unit for the Europa Clipper Mission
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  • IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS
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  • IF1-15: A 230-GHz 3.5-dBm Phase-Shifter-Embedded Frequency Tripler with 360° Phase-Shifting Range in 40-nm CMOS
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  • IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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  • IF1-25: 2200W High-Efficiency Amplifier Module Covering 325MHz and 352MHz Applications
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