Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 2501 - 2550 of 2742
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  • Tu4B-1: Shape estimation and pattern correction of flexible phased arrays using local curvature measurements
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  • Tu4C-2: Planar Low-Loss Ultra-Wideband Coaxial-Less Balun and 4-Way Combiner for High-Power Applications
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  • Tu4D-1: Ultrawideband Vector Modulators for Next-Gen Wireless Networks in the 200–480GHz Range
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  • Tu4E-5: Neural Network Based Nonlinear Forward Model Identification for Digital MIMO Arrays Under Load Modulation
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  • Tu4F-5: An Interleaved 1×8 Dual-Polarized L-band Phased Array with Digital Transmit/Receive Beamforming Using RFSoC
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  • We1B-5: A C-Band High-Precision Amplitude-Phase Control Multi-Functional Chip with Symmetric Polyphase Filter and X-Type Attenuator
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  • We1D-3: Towards Tensor-Train Solution of Vector Volume Integral Equation in 3D with log-N Complexity
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  • We1E-5: Band-Pass Filter Based on Stacked Metal Plates in V-Band Waveguide Technology
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  • We1G-5: A DC-to-170GHz Direct-Coupled Mixer Achieving 47dB LO-RF Isolation in 250nm InP DHBT Technology
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  • We2B-1: A 22–30GHz Ultra Low RMS Phase Error SiGe HBT BiCMOS Active Vector Modulator Phase Shifter with a Tunable Two-Section Lumped Element Differential Quadrature Hybrid
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  • We2B-4: A 16.2-to-22.2-GHz Phased-Array Receiver with -60-to-85°C Simultaneously Gain and NF Temperature Compensation Supporting 24Gb/s 64QAM Modulation
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  • We2C-4: Extraction of Coupling Matrix for Bandpass Filters Based on Magnitude of S-Parameters
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  • We2E-1: 50-Way W-Band All Waveguide Radial Combiner Design
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  • We2G-3: A D-Band ×15 Frequency Multiplier Chain in 45nm SiGe BiCMOS for Board-Level Packaged Array Applications
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  • We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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  • We3B-3: A 71-to-76GHz 8-Element Switchless Isolated Spectrum Phased-Array Transceiver with Direct-Modulation and Reflectionless Sliding-IF
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  • We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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  • We3C-5: An Ultra-Compact D-Band SIW Filter with Multifunction Transitions to Coplanar Input/Output
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  • We3G-2: A 19.3-to-27.3GHz Area-Reuse Double Dual-Core Complementary Class-F-1 VCO with Non-Interfering Multiple Resonances Achieving 203.3dBc/Hz FoMT and 213.3dBc/Hz FoMTA
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  • We3H-2: A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications
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  • IF1-4: An Area-Efficient Reconfigurable Compact Multi-Band Directional Coupler in RF SOI CMOS Technology
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  • IF1-9: Electromagnetically Induced Transparency Based Metamaterials Integrated with Plasma Cells for High Power Microwave Protection
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  • IF1-17: Material Characterization of Graphene Oxide and Reduced Graphene Oxide Using Resonance Methods
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  • IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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  • IF1-27: Quantum Method for Solving S-Parameters of Lossless Waveguides Based on the HHL Method and Finite-Element-Method
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  • IF1-32: S-Parameter-Based Simulation Technique and Crosstalk Suppression for Large-Scale Superconducting Quantum-Computing Chip Design
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  • IF1-36: Multi-Functional Modulated Surface Based on M-Type Ferrite for mmWave Application
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  • IF1-43: A Compact Brick-Type 40GHz-Band DBF Transmit Antenna Module Using Direct Digital RF Technology
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  • Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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  • Th1A-5: An Antipodal SIW-Fed Vivaldi Antenna at D-Band in LTCC for Flip-Chip RFIC Integration
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  • Th1C-1: Innovative Hybrid Stripline Guiding Structure for Wideband Crossover Implementation
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  • Th1D-3: Temperature and Humidity Effects on Electromagnetic Waves Utilizing 140GHz Radar Measurements
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  • Th1F-2: E-Band Power Amplifier with 32.2dBm Psat, 31.3dBm OP1dB Utilizing Commercial 0.10-µm GaAs pHEMT Technology
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  • Th1G-3: A 132GHz SiGe BiCMOS Sampler for Linear Front-Ends
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  • Th2A-1: Novel Low-Loss Shielded Interconnects for D-band/sub-THz Applications Using Microscale Metal Printing Technologies
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  • Th2B-2: Low-Loss Longitudinal Leaky SAW Filter with 1350MHz Bandwidth on LiNbO₃/SiO₂/SiC Platform for Wi-Fi 7
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  • Th2C-1: A Reconfigurable Filtering Circulator/Isolator with Continuously Controllable Center Frequency and Insertion Phase
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  • Th2D-3: A Wideband Digital Compensation Model Based on Fast Bandwidth Sensing for Zero-IF Receiver
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  • Th2F-2: 300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
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  • Th2G-2: A 130GHz 360° Gain-Invariant Phase Shifter with 5.625° Phase Resolution, 0.19° RMS Phase Error and < 0.56dB RMS Gain Error
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  • Th3A-1: Flexible Focalization: An Addititively Manufactured, Conformal, Low-Profile Multilayer Transmitarray for Space-Based 5G/mmWave Applications
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  • Th3A-5: Integration of Millimeter-Wave Air Filled Cavities and Filters Using Vertically Aligned Carbon Nanotubes
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  • Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
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  • Th3C-2: Tunable Dual-Band Coaxial Filter with Independent Band Control Using a Single Tuning Element Per Band
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  • Th3D-4: Differential-Mode Characterization of Multi-Port Passives up to 170GHz Using Independent Single-Ended Two-Port Measurements
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  • Th3F-3: AI-Assisted Template-Seeded Pixelated Design for Multi-Metal-Layer High-Coupling EM Structures: A Ku-Band 6G FR3 PA in 22nm FDX+
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  • Th3G-3: Broadband LNA with Dual-Resonance Matching Network with Capacitive Feedback for Improved Gain and Noise Figure Using 0.1-µm GaAs pHEMT Technology
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  • WSE-1: Integrating FR2 OAI and Hybrid RIS: Enhanced Network Management Implementing FR2 OAI, ORAN, and RIS
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  • WSM-1: VLC/LiFi for NextG Wireless
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  • WSH-8: Glass Core Technology as a Building Block for Advanced Packaging Architectures
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