Microwave Week 2020 Dashboard

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Displaying 2501 - 2550 of 2759

Tu2F-5: Compact Design of Highly-Efficient Dual-Band Voltage Doubler Rectifier by Using Second-Harmonics Suppression for Wireless Power Transfer
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Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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Tu3B-2: A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
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Tu3C-4: Predistortion Linearization: Concepts, The State of the Art, and the Future
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Tu3E-2: An Integrable Analog Domain Linearization Architecture for the Power Amplifiers in MIMO Systems
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Tu3F-4: Differential Frequency Selective Surface Sensor for Polymeric Coating Damage Detection Using Electromagnetically Shielded Reference Resonator
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Tu4A-4: Highly Sensitive Frequency- and Self-Injection-Locked Radar for Precise Vital Sign Detection
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Tu4B-5: Integrated Sensing and Communication Using Reconfigurable Intelligent Surface: Hardware, Ray-Tracing Demonstration, and Channel Measurement in the 6G Mid Band
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Tu4C-4: A Highly-Efficient 4.3GBaud Push-Pull LDMOS Based Pre-Driver with 6V Signal-Swing for GaN HEMTs in 22nm FDSOI
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Tu4E-1: KEYNOTE: Efficiency Enhancements Using Digital Predistortion and Advanced Transmitters
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Tu4F-3: A Heterogeneous Transceiver in 0.1µm D-Mode GaAs and 65nm CMOS for SATCOM Phased Arrays
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We1B-3: A 5–7.1GHz 4-Channel CMOS Wi-Fi 7 Transceiver Front-End for Fiber-to-the-Room with Analog Beamforming and Digital Predistortion
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We1C-3: A New Folded Coupling Reflectionless Bandpass Filter with Broadband Ultra-Low Reflection Property and Very High Frequency Selectivity
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We1E-1: Compact Ku-Band Diplexer with Additive Manufactured Multi-Material Dielectric Resonator Insets
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We1G-2: A 22–34GHz CMOS Neutralization-Based Direct-Conversion I/Q Up-Converter for 1024-QAM Modulation
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We1H-3: A Continuous-Mode Class-F-1 X-Band GaN MMIC Power Amplifier with a 29.7% Fractional Bandwidth
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We2B-2: A 28/39-GHz Reconfigurable Phased-Array Transmitter Front-End for 5G New Radio in a 65nm CMOS
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We2C-1: Direct Synthesis for High Selectivity Lowpass/Bandpass Co-Designed Filters with Independent Sub-Band Responses
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We2D-4: A Power-Efficient Plasma Jet Line Enabled by Dielectric Anapole Resonator Technology
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We2E-6: Optimizing Material and Shape of 3D-Printed Waveguide Terminations
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We2G-5: A 220–280GHz InP Frequency Doubler with a Compact, Low-Loss Folded Marchand Balun
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We2H-5: A 24GHz Power Amplifier with a Switching Output Combiner for a Dual-Mode MIMO Radar System
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We3B-5: A 71–76GHz Phased-Array Transmitter with Nested-Coupler-Based Phase Shifter in 65nm CMOS
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We3C-3: A DC-51.5 GHz Digital Step Attenuator with Sub-5 dB Insertion Loss and 3.1° RMS Phase Error
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We3D-5: Knowledge-based Extrapolation of Neural Network Model for Transistor Modeling
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We3G-4: Low-Power and Low-Phase Noise 94-GHz and 107.2-GHz Differential Fundamental Oscillators in 70-nm GaAs pHEMT Technology
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IF1-1: Ku-Band Multi-Functional Bandpass Filtering Isolators (BPFIs) Using GaAs Coupled-Line-Based Unilateral Frequency-Selective Stages
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IF1-6: USB Type-C Receptacle Connector with Ceramic Insulator and Three-Layer Ground Plates
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IF1-13: A Wideband TIA-Driver Unit in 22-nm CMOS FDSOI for Integrated Microwave Optoelectronic Oscillators
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IF1-19: Accurate Large-Scale Motion Sensing With FMCW Radar Based on Range-Dependent DFT Technique
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IF1-23: A 28nm CMOS Almost All-Digital 0.5 to 4.0GHz Ultra-Wideband Ground Penetrating Radar for Lunar Surface Exploration
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IF1-29: GaN Trap Model Extraction Based on MHz Load-Line Measurements
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IF1-35: An Effective Basis Function Generation Structure for Digital Pre-Distortion in Wideband Scenarios
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IF1-40: TCN-DPD: Parameter-Efficient Temporal Convolutional Networks for Wideband Digital Predistortion
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IF1-46: Extended D-Band Low-Noise-Amplifier MMICs Based on a 50-nm Metamorphic HEMT Technology
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Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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Th1B-2: A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
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Th1C-4: Twisted-Shaped Millimeter-Wave Hybrid Couplers in 150nm GaN Technology for 5G Applications
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Th1D-5: A Novel Q-Choked Sapphire Sandwiched Resonator for Wide-Band Measurements of Flat Dielectric Samples
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Th1G-1: Broadband and Power-Efficient Optoelectronic Transmitter Monolithically Integrated in a SiGe BiCMOS ePIC Technology
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Th1G-5: A 0.9pJ/Bit 56Gb/s High-Swing Tri-Mode Wireline Transmitter with 6-Bit DAC Controlled Tailless-CML Driver and Impedance Calibration Loop
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Th2A-4: First Demonstration of Highly Scaled RF GaN-on-Si Dielets Embedded in Glass Interposer
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Th2B-3: Frequency and Bandwidth Design of Millimeter Wave Thin-Film Lithium Niobate Acoustic Filters
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Th2C-4: Enhanced Performance of Continuously Variable Phase Shifters Using Liquid Crystals in Corrugated Oversized Substrate Integrated Waveguides
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Th2D-4: Cross-Spectrum Phase Noise Measurements of 10-15-Level Stability Photonic Microwave Oscillators
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Th2F-5: A Broadband InP Darlington Amplifier with Two-Way Distributed Power Combining
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Th2G-4: A 71–86-GHz Receiver with 5-GHz IF Signal Bandwidth for E-Band Broadband Communication in 65-nm CMOS
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Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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Th3B-1: Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
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Th3B-4: Influence of Double-Deck T-Gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
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Microwave Week 2020 Dashboard

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